Spectroscopic Ellipsometry Applied in the Full p-i-n a-Si:H Solar Cell Device Configuration

نویسندگان
چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Spectroscopic Ellipsometry Studies of n-i-p Hydrogenated Amorphous Silicon Based Photovoltaic Devices

Optimization of thin film photovoltaics (PV) relies on characterizing the optoelectronic and structural properties of each layer and correlating these properties with device performance. Growth evolution diagrams have been used to guide production of materials with good optoelectronic properties in the full hydrogenated amorphous silicon (a-Si:H) PV device configuration. The nucleation and evol...

متن کامل

p-n Junction Heterostructure Device Physics Model of a Four Junction Solar Cell

We present results from a p-n junction device physics model for GaInP/GaAs/GaInAsP/GaInAs four junction solar cells. The model employs subcells whose thicknesses have an upper bound of 5μm and lower bound of 200nm, which is just above the fully depleted case for the assumed doping of NA = 1 x 10 cm and ND = 1 x 10 cm. The physical characteristics of the cell model include: free carrier absorpti...

متن کامل

Dilute nitride and GaAs n-i-p-i solar cells

We demonstrate for the first time the operation of GaInNAs and GaAs n-i-p-i doping solar cells with ion-implanted selective contacts. Multiple layers of alternate doping are grown by molecular beam epitaxy to form the n-i-p-i structure. After growth, vertical selective contacts are fabricated by Mg and Si ion implantation, followed by rapid thermal annealing treatment and fabrication into circu...

متن کامل

Hole diffusion profile in a p-p+ silicon homojunction determined by terahertz and midinfrared spectroscopic ellipsometry

Hole diffusion profile in a p-p+ silicon homojunction determined by terahertz and midinfrared spectroscopic ellipsometry" (2009). Faculty Publications from Nebraska Center for Materials and Nanoscience. Paper 99.

متن کامل

Spectroscopic ellipsometry study

The dielectric functions of InP, IIla.53 Gao.47 As, and 1110.75 Gao.2S Aso.s P 0.5 epitaxial layers have been measured using a polarization-modulation spectroscopic ellipsometer in the 1.5 to 5.3 eV region. The oxide removal procedure has been carefully checked by comparing spectroscopic ellipsometry and x-ray photoelectron spectroscopy measurements. These reference data have been used to inves...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: IEEE Journal of Photovoltaics

سال: 2015

ISSN: 2156-3381,2156-3403

DOI: 10.1109/jphotov.2014.2362294